DMA10I1600PA 1 3 single diode standard rectifier part number DMA10I1600PA backside: cathode fav f v v 1.21 rrm 10 1600 = v = v i = a features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations to-220 industry standard outline rohs compliant epoxy meets ul 94v-0 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms and conditions of usage ixys reserves the right to change limits, condition s and dimensions. 20130108b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
DMA10I1600PA v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.26 r 1.5 k/w r min. 10 v rsm v 10 t = 25c vj t = c vj ma 0.2 v = v r t = 25c vj i = a f v t = c c 150 p tot 100 w t = 25c c r k/w 10 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.53 t = 25c vj 150 v f0 v 0.82 t = c vj 175 r f 37 m ? v 1.21 t = c vj i = a f v 10 1.57 i = a f 20 i = a f 20 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 4 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 120 130 50 50 aa a a 100 110 72 70 1600 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.50 ixys reserves the right to change limits, condition s and dimensions. 20130108b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
DMA10I1600PA ratings xxxxxx zyyww logo part number date code lot # abcdef product marking assembly line d m a 10 i 1600 pa part description diode standard rectifier (up to 1800v) single diode to-220ac (2) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 0.6 mounting torque 0.4 t vj c 175 virtual junction temperature -55 weight g 2 symbol definition typ. max. min. conditions operation temperature unit f c n 60 mounting force with clip 20 i rms rms current 25 a per terminal 150 -55 to-220 similar part package voltage class dma10im1600pz to-263ab (d2pak) (2hv) 1600 delivery mode quantity code no. ordering number marking on product ordering DMA10I1600PA 508780 tube 50 DMA10I1600PA standard t stg c 150 storage temperature -55 threshold voltage v 0.82 m ? v 0 max r 0 max slope resistance * 34 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20130108b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
DMA10I1600PA dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 5.08 bsc 0.200 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 2x b2 e ?p q d l1 l 2x b e c a2 h1 a1 a 1 3 4 = supplier option 1 3 outlines to-220 ixys reserves the right to change limits, condition s and dimensions. 20130108b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
DMA10I1600PA 0.001 0.01 0.1 1 40 60 80 1 0 0 2 3 4 5 6 7 8 9 01 1 10 1 10 2 0.5 1.0 1.5 2.0 0 5 10 15 20 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 0 50 100 150 200 0 4 8 12 16 20 24 28 i f [ a] v f [v] i fsm [a] t [s] i 2 t [a 2 s] t [ms] p tot [ w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current and ambie nt temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case t [ms] constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 0.8 0 50 100 150 200 50 hz, 80%v rrm t vj = 45c t vj = 45c v r = 0 v t vj = 150c t vj = 150c t vj = 25c t vj = 125c t vj = 150c r thha = 4 k/w 8 k/w 10 k/w 12 k/w 16 k/w 20 k/w dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 rectifier ixys reserves the right to change limits, condition s and dimensions. 20130108b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
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